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1SS369
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
Features * Low forward voltage * Low reverse current
PINNING PIN 1 2 DESCRIPTION Cathode Anode
2
Applications * High Speed Switching
1
SU
Top View Marking Code: "SU" Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Maximum (Peak) Reverse Voltage Reverse Voltage Average Forward Current Maximum (Peak) Forward Current Surge Forward Current (10 ms) Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range
Symbol VRM VR IO IFM IFSM Ptot TJ Topr Ts
Value 45 40 100 300 1 150 125 - 40 to + 100 - 55 to + 125
Unit V V mA mA A mW
O
C C C
O
O
Characteristics at Ta = 25 OC
Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 40 V Total Capacitance at f = 1 MHz Symbol VF IR CT Max. 0.6 5 25 Unit V A pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 01/09/2006
1SS369
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 01/09/2006
1SS369
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads SOD-323
A c
HE D A
E
bp
UNIT mm
A 1.10 0.80
bp 0.40 0.25
C 0.15 0.00
D 1.80 1.60
E 1.35 1.15
HE 2.80 2.30
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 01/09/2006

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